Nanotwinning in monocrystalline silicon upon nanoscratching
نویسندگان
چکیده
Nanoscratching-induced deformation in monocrystaline silicon is found to depend on the loading conditions. Molecular dynamics simulations reveal that amorphous phase transformation and nanotwins are the two major mechanisms. At a relatively low scratching depth, amorphous transformation occurs on the surface; however, when the scratching depth is greater than 1 nm, nanotwinning also emerges in the subsurface along h1 1 0i direction and its formation is associated with the body-centred-tetragonal-5 Si phase transformation. The twinning deformation stops at a Shockley partial dislocation. Crown Copyright 2011 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.
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